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........ published in NEWSLETTER # 56
PHYSICAL AND TECHNICAL PROBLEMS OF SOI STRUCTURES AND DEVICES
by Dr. J.P. Colinge, Catholic University, Louvain-la-Neuve (Belgium) and Ds. V.S. Lysenko and A.N. Nazarov, Ukrainian Academy of Science, Kiev (Ukraine)
For over 10 years, scientists from East and West have been working on Silicon-on-Insulator (SOI) technologies. Scientists from the USSR were publishing their works in Russian and virtually no SOI scientist in the West can read that language. Besides the language barrier, security matters sometimes prevented USSR scientists from publishing their work in western journals. A third and unfortunately very large barrier has now arisen: the economical barrier, which makes it difficult for Former Soviet Union (FSU) scientists to travel abroad and disseminate their findings. In a NATO Workshop organized near Yalta, Ukraine, in November 1994, the participants from NATO countries had the opportunity to meet excellent FSU scientists with remarkable ideas and achievements to their credit.
During the Workshop, information, experiences and ideas about Silicon-on-Insulator technology were exchanged. It is now well accepted that SOI devices offer unique advantages in fields such as radiation hardness, high-temperature operation, sensors, VLSI and low-power, low-voltage integrated circuits. The problems associated with SOI structures and devices are, however, generally less publicized. These problems are, of course common to NATO and FSU scientists, but different (and complementary) ways to address and solve them have been devised on both sides.
This book (NATO ASI SERIES 3_4) is centered around four major themes: SOI materials, SOI materials characterization techniques,
SOI devices and SOI circuits. In the SOI materials sections, the fabrication techniques and prospects for the SIMOX, porous silicon, ZMR, semiinsulating silicon, SIMON and wafer bonding processes are addressed. The SOI materials characterization techniques section describes the physical and electrical methods employed to assess the quality of SOI materials as well as the type of defects found in these materials. The SOI devices chapter deals with the properties of MOSFETs, TFT's, bipolar transistors and other devices fabricated in SOI. Finally, the SOI circuits section describes the properties and potentials of SOI CMOS circuits and SOI sensors.
Reference books: 3-4, B180, B342, E47, E48, E55, E62, E136, E160, E175, E193, E234, E244, E270, E276, E289
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